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　　　　　[FY2010]　　 [FY2009]　　 [FY2008]　　 [FY2007]　　 [FY2006]　　 [FY2005]　　 [FY2004]　　 [FY2003]　　 [FY2002]　　 [FY2001]　　 [-FY2000]

Before FY2000

  1. S. Sasa, S. Yodogawa, A. Ohya, and M. Inoue, "A single-electron transistor produced by nanoscale oxidation of InAs", Jpn. J. Appl. Phys. vol. 40, pp. 2026-2028 (2001).
  2. S. Sasa, A. Ohya, M. Yodogawa, and M. Inoue, "Nanoscale oxidation of InAs and its device applications", Procs. of 12th Int. Conf. on Indium Phosphide and Related Materials, pp. 205-208 (2000).
  3. K. Koike, K. Saitoh, S. Li, S. Sasa, M. Inoue, and M. Yano, "Room-temperature operation of a memory-effect AlGaAs/GaAs heterojunction field-effect transistor with self-assembled InAs nanodots", Appl. Phys. Lett. vol. 76, pp. 1464-1466 (2000).
  4. M. Inoue, T. Maemoto, M. Ichiu, A. Ohya, S. Sasa, K. Ishibashi, and Y. Aoyagi, "Formation and charactrerization of a quasi-one-dimensional InAs lateral surface superlattice", Procs. 9th Int. Conf. on Narrow Gap Semiconductors (1999).
  5. T. Maemoto, M. Ichiu, A. Ohya, S. Sasa, and M. Inoue, "Magnetotransport in InAs/AlGaSb quantum wires with a weak periodic potential", Physica B vol. 272, pp. 110-113 (1999).
  6. S. Sasa, K. Anjiki, and M. Inoue, "Electron transport in a large spin-splitting 2DEG in InAs/AlGaSb heterostructures", Physica B vol. 272, pp. 149-152 (1999).
  7. T. Maemoto, M. Inoue, S. Sasa, M. Ichiu, K. Anziki, and K. Nakayama, "Quasi-one-dimensional electron transport in InAs mesoscopic devices", Microelectronic Engineering 47, pp. 159-161 (1999).
  8. J. G. Tischler, H. A. Nickel, Z. X. Jiang, B. A. Weinstein, B. D. Mccombe, S. Sasa, and M. Inoue, "HIGH PRESSURE MAGNETO-OPTICAL STUDIES OF ELECTRONS IN GaSb/AlSb/InAs HETEROSTRUCTURES", The Physics of Semiconductors (1999).
  9. S. Sasa, Y. Tsujie, M. Yano, and M. Inoue, "Growth and characterization of InAs/AlInSb type-II superlattices for mid-infrared applications", Inst. Phys. Conf. Ser. No. 162, pp. 99-104 (1999).
  10. S. Sasa, T. Ikeda, M. Akahori, A. Kajiuchi, and M. Inoue, "Novel nanofabrication process for InAs/AlGaSb heterostructures utilizing AFM oxidation", Jpn. J. Appl. Phys. vol. 38, pp. 1064-1066 (1999).
  11. S. Sasa, T. Ikeda, A. Kajiuchi, and M. Inoue, "Coulomb blockade observed in InAs/AlGaSb nanostructures made by AFM oxidation process", Jpn. J. Appl. Phys. vol. 38, pp. 480-482 (1999).
  12. S. Osako, T. Hamano, N. Mori, C. Hamaguchi, S. Sasa, and M. Inoue, "Magnetophonon and magneto-intersubband-scattering effects in InAs/AlGaSb heterostructures", Physica B vol. 249-251, pp. 740-744 (1998).
  13. S. Sasa, T. Ikeda, C. Dohno, and M. Inoue, "InAs/AlGaSb nanoscale device fabrication using AFM oxidation process", Physica E vol. 2, pp. 858-861 (1998).
  14. S. Sasa, T. Ikeda, A. Kajiuchi, and M. Inoue, "AFM fabrication and characterization of InAs/AlGaSb nanostructures", Solid-State Electronics vol. 42, pp. 1069-1074 (1998).
  15. S. Sasa, T. Ikeda, M. Akahori, A. Kajiuchi, and M. Inoue, "Novel nanofabrication process for InAs/AlGaSb heterostructures utilizing AFM oxidation", Procs. of Int. Conf. on InP and Related Materials (IPRM'98) pp. 639-642 (1998).
  16. M. YANO, Y. SEKI, T. IKEDA, S. SASA, M. INOUE, "HIGH DENSITY SELF-ASSEMBLED InSb/AlGaSb QUANTUM DOT GROWTH USING MOLECULAR BEAM EPITAXY", Narrow Gap Semiconductors, pp. 450-453 (1998).
  17. M. Yano, Y. Seki, H. Ohkawa, S. Sasa, and M. Inoue, "Characteristics of Self-Assembled InSb Dots Grown on (100) AlGaSb by Molecular Beam Epitaxy", Jpn. J. Appl. Phys. vol. 37, pp. 2455-2459 (1998).
  18. S. Osako, T. Hamano, K. Yamasaki, K. Moriyasu, N. Mori, C. Hamaguchi, S. Sasa, and M. Inoue, "Combined oscillations of magnetoresistance due to inelastic and elastic scatterings in InAs/AlGaSb quantum well structures", Semicond. Sci. Technol. vol. 13, pp. 181-184 (1998).
  19. T. Maemoto, H. Yamamoto, M. Konami, A. Kajiuchi, T. Ikeda, S. Sasa, and M. Inoue, "High Speed Quasi-One-Dimensional Electron Transport in InAs/AlGaSb Mesoscopic Devices", Phys. Stat. Sol. vol. 204, pp. 255-258 (1997).
  20. T. Maemoto, H. Dobashi, H. Yamamoto, S. Sasa, and M. Inoue, "Superconductor-semiconductor junctions with InAs/Al(Ga)Sb quantum wells", Appl. Surf. Sci. vol. 117/118, pp. 714-718 (1997).
  21. Shigehiko Sasa, Takatoshi Ikeda, Chiaki Dohno and Masataka Inoue, "Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures", Jpn. J. Appl. Phys. vol. 36, pp. 4065-4067 (1997).
  22. T. Hamano, K. Moriyasu, S. Osako, N. Mori, C. Hamaguchi, S. Sasa, and M. Inoue, "Magnetotransport of Low Dimensional Electron Gas in InAs/AlGaSb Heterostructures", Tech. Rept. of the Osaka Univ. vol. 47, pp. 61 (1997).
  23. S. Sasa, Y. Yamamoto, S. Izumiya, M. Yano, Y. Iwai, and M. Inoue, "Increased electron concentration in InAs/AlGaSb heterostuctures using a Si planar doped ultrathin InAs quantum well", Jpn. J. Appl. Phys. vol. 36, pp. 1869-1871 (1997).
  24. S. Sasa, T. Sugihara, K. Tada, S. Izumiya, Y. Yamamoto, and M. Inoue, "High Field Transport Properties of InAs/AlGaSb Quantum Wires", Procs. of New Phenomena in Mesoscopic Structures NPMS'95 (1996).
  25. S. Sasa, T. Sugihara, K. Tada, S. Izumiya, Y. Yamamoto, and M. Inoue, "High Field Transport Properties of InAs/AlGaSb Quantum Wires", Physica B vol. 227 pp. 363-366 (1996).
  26. M. Inoue, T. Sugihara, T. Maemoto, S. Sasa, H. Dobashi, and S. Izumiya, "Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures", Superlattices and Microstructures vol. 21 (1) pp. 1-8 (1996).
  27. S. Sasa, Y. Yamamoto, S. Izumiya, M. Yano, Y. Iwai, and M. Inoue, "Increased electron concentration in InAs/AlGaSb heterostuctures using a Si planar doped ultrathin InAs quantum well", Extended Abstract of Int. Conf. on SSDM 96 pp. 550-552 (1996).
  28. J. Kono, Y. Nakamura, X. G. Peralta, J. Cerne, S. J. Allen, Jr., H. Akiyama, H. Sakaki, T. Sugihara, S. Sasa, and M. Inoue, "Terahertz Photoresponse of Quantum Wires in Magnetic Fields", Superlattices and Microstructures vol. 20 (3) pp. 383-387 (1996).
  29. J. Kono, X. G. Peralta, J. Cerne, S. J. Allen, Jr., Y. Nakamura, H. Akiyama, H. Sakaki, T. Sugihara, S. Sasa, and M. Inoue, "Terahertz Photoresponse of Quantum Wires in Magnetic Fields", Procs. of ICPS96 (1996).
  30. Masataka Inoue, Shin-ichi Osako, Shigehiko Sasa, Kazuyuki Tada, Tsuyoshi Sugihara, Satoshi Izumiya, Yoshitaka Yamamoto, and Chihiro Hamaguchi, "Quasi-One-Dimensional Transport and Hot Electron Effects in InAs Mesoscopic Structures", Hot Carriers in Semiconductors (1996).
  31. Shin-ichi Osako, Tsuyoshi Sugihara, Yoshitaka Yamamoto, Toshihiko Maemoto, Shigehiko Sasa, Msataka Inoue, and Chihiro Hamaguchi, "Quantum anti-dot arrays and quantum wire transistors fabricated on InAs/Al0.5Ga0.5Sb heterostructures", Semicond. Sci. & Technol. vol. 11 571-575 (1996).