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FY2005

  1. "分子線エピタキシー法による ZnS/ZnOヘテロ接合の作製と界面反応", 小池，高田，濱，濱，越智，尾形，佐々，井上，矢野, 真空 vol. 48, pp. 31-33, 2005.
  2. "Molecular beam epitaxial growth of Al-doped ZnMgO alloy films for modulation-doped ZnO/ZnMgO heterostructures", K. Koike, K. Hama, I. Nakashima, S. Sasa, M. Inoue, and M. Yano, Jpn. J. Appl. Phys. vol. 44, pp. 3822-3827, 2005.
  3. "Linewidth broadening of intersubband transitions in narrow InAs/AlSb multi-quantum wells", S. Sasa, M. Nakai, M. Furukawa, M. Inoue, D. C. Larrabee, and J. Kono, Proc. 4th Int. Conf. on Electrical and Electronic Material Engineering, pp. 277-280, 2005.
  4. "Thermal stability of ZnO/Zn0.7Mg0.3O superlattices grown on sapphire substrates by molecular beam epitaxy", M. Yano, K. Koike, G. Takada, I. Nakashima, K. Fujimoto, S. Sasa, and M. Inoue, Extended Abstract of the 24th Electronic Materials Symposium, 2005.
  5. "Characteristics of a Zn0.7Mg0.3O/ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy", K. Koike, I. Nakashima, K. Hashimoto, S. Sasa, M. Inoue, and M. Yano, Appl. Phys. Lett. vol. 87, pp. 112106-1-3, 2005.
  6. "Growth of ZnO/Zn1-xMgxO films by pulsed laser ablation", T. Maemoto, N. Ichiba, S. Sasa, and M. Inoue, Thin Solid Films vol. 486, pp. 174-177, 2005.
  7. "Nanofabrication of InAs/AlGaSb heerostructures using atomic force microscope attached with a carbon nanotube", S. Sasa, K. Tsujimoto, and M. Inoue, Procs of Int. Symp. on Nano Science and Technology 2005, 2005.
  8. "Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells", S. Sasa, M. Nakai, M. Furukawa, M. Inoue, D. C. Larrabee, and J. Kono, Procs. of 12th Int. Conf. on Narrow Gap Semicond. 2005.
  9. "Observation of blue-shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantaion induced intermixing", V. A. Coleman, M. Buda, H. H. Tan, C. Jagadish, M. R. Phillips, K. Koike, S. Sasa, M. Inoue, and M. Yano, Semicond. Sci. Technol. vol. 21, pp. L1-L4, 2006.
  10. "Chemical states of nitrogen in ZnO studied by near-edge X-ray absorption fine structure and core-level photoemission spectroscopies" ,M. Petravic, P.N.K. Deenapanray, V.A. Coleman, C. Jagadish, K.-J. Kim, B. Kim, K. Koike, S. Sasa, M. Inoue, M. Yano,Surface Science 600, pp. L81-85, 2006.
  11. "Enhanced of PL intensity of ZnO films by KCl treatment and its application to FET fabrication", R. Tanaka, H. Ishii, N. Ichiba, T. Maemoto, S. Sasa. M. Inoue, Memories of the Osaka Institute of Technology, Series A, vol. 50, pp. 57-65, 2006.
  12. "Fabrication and characterization of ZnO/ZnMgO hetero-MISFET", M. Ozaki, K. Koike, S. Sasa, M. Yano, M. Inoue,Memories of the Osaka Institute of Technology, Series A, vol. 50, pp. 79-88, 2006.
  13. "Electron Transport in InAs field effect and ballistic devices", M. Koyama, M. Furukawa, T. Maemoto, S. Sasa, M. Inoue, Procs. of 12th Int. Conf. on Narrow Gap Semicond., 2005.
  14. "Propagation of electron waves in InAs/AlGaSb", T. Maemoto, M. Koyama, A. Nakashima, M. Nakai, S. Sasa, J.P. Bird, M. Inoue, 27th Int. Conf. on the Phys. of Semicond., AIP conference Proceedings vol. 772, 2005.
  15. "Fabrication and Characterization InAs/AlGaSb HFET with High-k Gate Insulator", M. Koyama, M. Nakai, M. Furukawa, T. Maemoto, S. Sasa, M. Inoue, 2005 Int. Meeting for Future of Electron Devices, Kansai, 2005.