FY2003

1. "ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy", K. Ogata, K. Koike, T. Tanite, T. Komuro, F. Yan, S. Sasa, M. Inoue, and M. Yano, J. of Crystal Growth, vol. 251, pp. 623-627, 2003.
2. "Electron transport in a submicron-scale AlGaAs/GaAs field-effect transistor with InAs nanodots as the floating gate", K. Koike, S. Sasa, M. Inoue, and M. Yano, J. of Vacuum Science & Technol, B, vol. 21, pp. 710-713, 2003.
3. "Temperature dependence of intersubband transitions in InAs/AlSb quantum wells", D. C. Larrabee, G. A. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, M. Nakai, S. Sasa, M. Inoue, K. I. Kolokolov, J. Li, C. Z. Ning, Appl. Phys. Lett. vol. 83, pp. 3936-3938, 2003.
4. 「A面サファイア基板を用いた単結晶 ZnO 薄膜の分子線エピタキシャル成長」、小池・小室・ F. P. Yan・尾形・佐々・井上・矢野、日本材料学会、2003.
5. "Application of terahertz quantum-cascade lasers to semiconductor cyclotron resonance", Diane C. Larrabee, Giti A. Khodaparast, Frank K. Tittel, and Jun Kono, Giacomo Scalaric, Lassaad Ajili, and Jerome Faist, harvey Beere, giles Davies, Edmund Linfield, and David Ritchie, Y. Nakajima, M. Nakai, S. Sasa, and M. Inoue, Optics Letters, vol. 29, pp.122-124, 2004.
6. "Aharonov-Bohm oscillations observed in nanoscale open-dot structures fabricated in an InAs surface inversion layer", S. Sasa, A. Nakashima, Y. Nakajima, and M. Inoue, Physica E, vol. 20, pp. 224-227, 2004.
7. 「シリコン基板を用いた Zn1-xMgxO 薄膜の分子線エピタキシー」、小池・小室・濱・越智・尾形・ 佐々・井上・矢野、J. Vac. Soc. Jpn、vol. 47、pp. 269-272、2004.
8. "CaF₂ Growth as a buffer layer of ZnO/Si heteroepitaxy", K. Koike, T. Komuro, K. Ogata, S. Sasa, M. Inoue, and M. Yano, Physica E, vol. 21, pp. 679-683, 2004.
9. "Characterization of undoped ZnO layers grown by molecular beam epitaxy towards biosensing devices","K. Ogata, K. Komuro, K. Hama, K. Koike, S. Sasa, M. Inoue, and M. Yano, Phys. Stat. Sol, vol. (c) 241-3, pp. 616-619, 2004.