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FY2004

  1. "Terahertz Radiation from InAs/AlxGa1-xSb (x = 0.5) heterostructures", M. Suzuki, T. Kiwa, M. Tonouchi, Y. Nakajima, S. Sasa, and M. Inoue, Physica E, vol. 22, pp. 574-577, 2004.
  2. "Electron-cyclotron-resonance plasma etching of the ZnO layers grown by molecular-beam epitaxy", K. Ogata, T. Honden, T. Tanite, T. Komuro, K. Koike, S. Sasa, M. Inoue, and M. Yano, J. Vac. Sci. Technol, A, vol. 22, pp. 531-533, 2004.
  3. "High resistive layers toward ZnO-based enzyme modified field effect transistor", K. Ogata, K. Koike, T. Tanite, T. Komuro, S. Sasa, M. Inoue, and M. Yano, Sensors & Actuators B, vol. 100, pp. 209-211, 2004.
  4. "Molecular Beam Epitaxial Growth of Wurtzite ZnxMg1-xO Alloy Films for UV-Detectores on (111)- Oriented Si Substrate", K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, Extended Abstract of the 23rd Electronic Materials Symposium, 2004.
  5. "Fabrication of organic molecules/ZnO hybrid structures toward glucose sensors","K. Ogata, T. Hama, K. Hama, S. Sasa, K. Koike, M. Yano, and M. Inoue, Int. Mtg. on Future Electron Devices Kansai, pp. 63-64, 2004.
  6. "Near infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells", M. Nakai, S. Sasa, Y. Nakajima, M. Furukawa, and M. Inoue, Int. Mtg. on Future Electron Devices Kansai, pp. 65-66, 2004.
  7. 「Siをドープした InAs/AlSb 量子井戸構造のサブバンド間遷移と界面評価」、中井・中島・古川・ 佐々・井上、Memoirs of the Osaka Inst. of Tech、Ser A、vol. 49、pp. 21-32、2004.
  8. "Control of chemical bonding of the ZnO surface grown by molecular beam epitaxy", K. Ogata, T. Komuro, K. Hama, K. Koike, S. Sasa, M. Inoue, and M. Yano, Appl. Surf. Sci. vol. 237, pp. 348-351, 2004.
  9. "Piezoelectric Carrier Confinement by Lattice Mismatch at ZnO/Zn0.6Mg0.4O Heterointerface", K. Koike, K. Hama, I. Nakashima, G. Takada, M. Ozaki, K. Ogata, S. Sasa, M. Inoue, and M. Yano, Jpn. J. Appl. Phys, vol. 43, pp. L1372-L1375, 2004.
  10. "Near-infrared intersubband transitions in delta-doped InAs/AlSb multi-quantum wells", S. Sasa. Y. Nakajima, M. Nakai, M. Inoue, D. C. Larrabee, and J. Kono, Appl. Phys. Lett, vol. 85, pp. 5553-5555, 2004.
  11. Characterization of Alkanethiol/ZnO structures by X-ray photoelectron spectroscopy", K. Ogata, T. Hama, K. Hama, K. Koike, S. Sasa, M. Inoue, and M. Yano, Appl. Surf. Sci. vol. 241, pp. 146-149 (2005).
  12. "Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications", K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, J. Cryst. Growth vol. 278, pp. 288-292, 2005.
  13. "Alloying at ZnS/ZnO Heterointerface Grown by Molecular Beam Epitaxy", K. Koike, G. Takada, K. Hama, T. Hama, H. Ochi, K. Ogata, S. Sasa, M. Inoue, and M. Yano, J. Vac. Soc. Jpn. vol. 48, pp. 127-129, 2005.