[FY2024]　 　　　　　[FY2023]　 [FY2022]　　 [FY2021]　　 [FY2020]　 [FY2019]　　 [FY2018]　　 [FY2017]　　 [FY2016]　　 [FY2015]　　 [FY2014]　　 [FY2013]　　 [FY2012]　　 [FY2011]　　

　　　　　[FY2010]　　 [FY2009]　　 [FY2008]　　 [FY2007]　　 [FY2006]　　 [FY2005]　　 [FY2004]　　 [FY2003]　　 [FY2002]　　 [FY2001]　　 [-FY2000]

FY2013

  1. "Rectification Effects of ZnO-Based Transparent Nanodiodes on Glass and Flexible Plastic Substrates", Y. Kimura, Y. Sun, T. Maemoto, S. Sasa, S. Kasai, and M. Inoue, Jpn. J. Appl. Phys. 52 06GE09 (2013).
  2. "Growth of a sputtered Ta2O5/ZnO film and its application to an ion-sensitive field-effect transistor", K. Mukai, T. Onaka, K. Koike, T. Maemoto, S. Sasa, M. Yano, IEEE, Future of Electron Devices, Kansai, pp. 46-47 (2013).
  3. "Flexible ZnO thin-film transistors on plastic substrates fabricated at room temperature", Yi Sun, Yuta Kimura, Toshihiko Maemoto, and Shigehiko Sasa, IEEE, Future of Electron Devices, Kansai, pp. 60-61 (2013).
  4. "Fabrication of Zinc Oxide Thin Film Transistors Using a Facing-Target Sputtering Method", Yusuke Okada, Ryuji Morita, Kenichi Ogata, Kazuto Koike, Toshihiko Maemoto, Mitsuaki Yano, and Shigehiko Sasa, IEEE, Future of Electron Devices, Kansai, pp. 62-63 (2013).
  5. "Fabrication of zinc oxide transparent thin film transistors on glass substrates by sol-gel method", Satoru Sasaki, Shigehiko Sasa, Toshihiko Maemoto, and Ken-Ichi Ogata, IEEE, Future of Electron Devices, Kansai, pp. 76-77 (2013).
  6. WO3を添加したMgCr2O4-TiO2系P型セラミックガス感応素子の特性, 寺田, 平原, 大松, 佐々, 矢野, 材料62-11, pp.683-688 (2013).