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FY2002

  1. "Magnetotransport properties of InAs nanostructure devices produced by AFM oxidation", S. Sasa, A. Nakashima, S. Yodogawa, T. Kita, and M. Inoue, Physica B, vol. 314, pp. 95-98, 2002.
  2. "Magneto-transport properties of InAs/AlGaSb open quantum dot structures", T. Maemoto, T. Kobayshi, T. Karasaki, K. Kita, S. Sasa, M. Inoue, K. Ishibashi, and Y. Aoyagi, Physica B, vol. 314, pp. 481-485, 2002.
  3. "Growth of the single-crystalline ZnO films on Si (111) substrates by plasma-assisted molecular-beam epitaxy", K. Koike, T. Tanite, S. Sasa, M. Inoue, and M. Yano, MRS Symosium Proceedings, vol. 692, pp. 655-660, 2002.
  4. "Periodic magnetoresistance oscillations observed near B = 0 in InAs nanoscale open-dot structures", A. Nakashima, S. Sasa, K. Ueda, Y. Nakajima, and M. Inoue, Proc. Of QNN'02, 2002.
  5. "Artificial nanostructure devices of InAs produced by AFM oxidation", S. Sasa, A. Nakashima, T. Kita, and M. Inoue, Inst. Phys. Conf. Ser, No 170, pp. 595-600, 2002.
  6. "Electrical isolation of ZnO by ion bombardment", S. O. Kucheyev, P. N. K. Deenapanray, C. Jagadish, J. S. Williams, M. Yano, K. Koike, S. Sasa, M. Inoue, K. Ogata, Appl. Phys. Lett, vol. 81, pp. 3350-3352, 2002.
  7. "Implant Isolation of ZnO", S. O. Kucheyev, C. Jagadish, J. S. Williams, P. N. K. Deenapanray, M. Yano, K. Koike, S. Sasa, M. Inoue, and K. Ogata, J. Appl. Phys., vol. 93, pp. 2972-2976, 2003.